Analyses of Surface and Interfacial Layers in Polycrystalline Cu2O Thin-Film Transistors

作者：Ran Fan Yong^*; Taniguti Masataka; Hosono Hideo; Kamiya Toshio

来源：Journal of Display Technology, 2015, 11(9): 720-724.

DOI：10.1109/JDT.2015.2432752

• Copper compounds
• semiconductor films
• surface/interface layers
• thin-film transistors (TFTs)

Effects of low temperature (300 degrees C) annealing on Cu2O films were investigated by analyzing the film stacking structures with photoemission spectroscopy, X-ray reflectivity spectroscopy and spectroscopic ellipsometory in relation to p-channel TFT characteristics and possible origins of trap states. The Hall mobility of optimum Cu2O films was 2.1 cm(2)/(V.s); however, the bottom-gate Cu2O TFT exhibited a much lower field effect mobility of the order of 10(-4) cm(2)/(V.s) and an on/ off drain current ratio of 10(3). This work detected a surface layer and an interface layer in the Cu2O/SiO2 samples, i.e., the surface layer included the state of Cu ions that would form subgap hole trap states at the back channel region. In addition, the low-density layer at the Cu2O-SiO2 interface would produce extra interfacial trap states.

• 出版日期2015-9