Accurate dry etching technique for germanium waveguide by using CHF3 based inductively coupled plasma

作者：Idris A S^*; Jiang H; Hamamoto K

来源：Electronics Letters, 2016, 52(22): 1868-+.

DOI：10.1049/el.2016.2846

• photoresists
• etching
• waveguides
• germanium
• elemental semiconductors
• dry etching technique
• germanium waveguide
• inductively coupled plasma
• CHF3 ICP
• polymeric photoresist
• Ge
• CHF3

A CHF3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under-cut. As a result, an almost vertical sidewall angle of 85 degrees with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.

• 出版日期2016-10-27