Mapping of performance limiting issues to analyze top and bottom contact organic thin film transistors

作者：Mittal Poornima^*; Negi Yuvraj Singh; Singh R K

来源：Journal of Computational Electronics, 2015, 14(1): 360-379.

DOI：10.1007/s10825-015-0663-7

• Bottom contact
• Contact thickness
• Mobility
• Organic thin film transistor
• Top contact

This research paper acutely analyzes an assortment of issues to model the behaviour of top contact (TC) and bottom contact (BC) organic thin film transistors (OTFTs) using organic module of Atlas numerical device simulator. Additionally, device performance parameters, such as current (I-D), mobility (mu), threshold voltage (V-T) and sub-threshold slope (SS) are analyzed. Moreover, the contact behaviour is investigated from device physics point of view. Different simulation strategies are incorporated for mapping of various performance issues in analyzing practical TC and BC OTFTs. The complete analysis comprises of five different approaches for both TC and BC structures: (1) material parameters along with Poole-Frankle mobility model, (2) defects in bulk OSC, (3) dipoles at OSC-dielectric interface, (4) correction for leakage current and (5) elimination of contacts voltage drop. After applying these calibration standards, the TC device reasonably matched to the reported results, whereas; some additional issues like unfilled corners and low mobility regions near the source/drain contacts are further accounted to validate the response of BC structure. Additionally, both structures are analyzed at different contact thickness (t(S)/D). Consequently, on increasing t(S)/D from infinitesimal to 50 nm, the BC parameters are improved by 57, 46, 17, 28 and 23% in terms of I-D, mu, V-T, SS and R-S, respectively due to injection of sufficient charge carriers. However, very small change is obtained for TC structure. This study simplifies number of issues associated to design and fabrication of organic material based devices and circuits.

• 出版日期2015-3