Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

作者：Leiner J^*; Tivakornsasithorn K; Liu X; Furdyna J K; Dobrowolska M; Kirby B J; Lee H; Yoo T; Lee Sanghoon

来源：Journal of Applied Physics, 2011, 109(7): 07C307.

DOI：10.1063/1.3536669

Interlayer exchange coupling (IEC) between two Ga(0.95)Mn(0.05)As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

• 出版日期2011-4-1