Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

作者：Le Son T^*; Jannaty P; Luo Xu; Zaslavsky A; Perea Daniel E; Dayeh Shadi A; Picraux S T

来源：Nano Letters, 2012, 12(11): 5850-5855.

DOI：10.1021/nl3032058

• SiGe heteronanowire
• tunneling field effect transistor
• axial heterojunction
• VLS growth

We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I-ON similar to 2 mu A/mu m, fully suppressed ambipolarity, and a subthreshold slope SS similar to 140 mV/decade over 4 decades of current with lowest SS similar to 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with a good I-ON/I-OFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

• 出版日期2012-11