Analysis of Resistive Open Defects in Drowsy SRAM Cells

作者：Nourivand Afshin^*; Al Khalili Asim J; Savaria Yvon

来源：Journal of Electronic Testing-Theory and Applications, 2011, 27(2): 203-213.

DOI：10.1007/s10836-011-5206-y

• Fault modeling
• Drowsy SRAM caches
• Low-power design
• Open defects
• Weak cells
• Memory test
• Yield

New fault behaviors can emerge with the introduction of a drowsy mode to SRAMs. In this work, we show that, in addition to the data-retention faults that can occur during the drowsy mode, open defects in SRAM cells can also result in new fault behaviors when a memory is accessed immediately after wake-up. We first describe these new read-after-drowsy (RAD) fault behaviors and derive their corresponding fault primitives (FPs). Then, we propose a new March test, called March RAD, by inserting drowsy operations to a traditional test algorithm. Finally, the impact of the standby supply voltage on triggering the drowsy faults in SRAM cells is investigated. It is shown that, as the supply voltage is reduced in the drowsy mode to further cut down leakage, open defects with a parasitic resistance as small as 100 K Omega begin to cause faults.

• 出版日期2011-4