Annealing-Induced Effects on the Chemical Structure of the In2S3/Culn(S,Se)(2) Thin-Film Solar Cell Interface

作者:Hauschild D; Meyer F; Benkert A; Kreikemeyer Lorenzo D; Pohlner S; Palm J; Blum M; Yang W; Wilks R G; Baer M; Heske C; Weinhardt L*; Reinert F
来源:Journal of Physical Chemistry C, 2015, 119(19): 10412-10416.
DOI:10.1021/acs.jpcc.5b01622

摘要

We have investigated the impact of heat treatment on the chemical structure of the In2S3/CuIn(S,Se)(2) thin-film solar cell interface using X-ray photoelectron and soft X-ray emission spectroscopy. As-grown, we find the formation of a sulfur-poor (indium-rich) In2S3 surface, an abrupt interface, and sulfur atoms in both In2S3 and CuIn(S,Se)(2) chemical environments (as expected for an abrupt interface and a thin over-layer). After a heat treatment at 200 degrees C to simulate subsequent process steps, a strong copper and sodium diffusion into the In2S3 layer is observed. This diffusion extends throughout the layer, indicating the formation of a copper-indium-sulfide phase.

  • 出版日期2015-5-14