Luminescent properties of MBE-grown Si:Er/SOi structures

作者：Andreev B A^*; Krasilnik Z F; Kryzhkov D I; Shengurov D V; Yablonskiy A N; Kuznetsov V P

来源：Journal of Luminescence, 2012, 132(12): 3148-3150.

DOI：10.1016/j.jlumin.2011.11.025

• Erbium-doped Si
• Light-emitting Er centers
• Sublimation MBE
• SOI

Here we report on luminescent properties of multilayer Si:Er structures grown by sublimation molecular-beam epitaxy on "silicon-on-insulator" substrates. We demonstrate formation in such structures of a unique erbium-related center Er-1. This optical complex stands out among other known erbium-related centers in silicon for its record narrow luminescent line ( < 10 mu eV) and largest absorption cross-section and, therefore, provides the best conditions to achieve practically significant amplification and stimulated emission in erbium-doped silicon structures.

• 出版日期2012-12