Microstructures, defects and atomic alignments of grain boundary in diamond/silicon composite

作者：Wei YH^*; Hideki I; Hou LF; Xu BS

来源：Rare Metal Materials and Engineering, 2005, 34: 26-30.

• diamond
• silicon
• interface
• composite

Diamond film will possibly be used in various fields due to its excellent properties. Micro structures, defects and atomic alignments of grain boundary in silicon/diamond composite have been summarized in this paper. The following has been drawn. 1) Although the nucleation rate of diamond on silicon is small, it can be improved by either pretreating substrate with diamond slurry (mixed with metal or carbide particles) or exerting bias voltage on substrate. 2) The nucleation locations of diamond on silicon are amorphous phases, carbides and clean silicon surface. 3) The defects in grain boundary of diamond/silicon consist of twins, stacking faults and dislocations. 4) The diamond grain boundary fails in complying with least gangling bond rule, which indicates the grain boundary structure is finally governed by the characteristics of electron structure of each atomic species.

• 出版日期2005-9
• 单位太原理工大学