High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels

作者：Lu Yi Hsien^*; Kuo Po Yi; Lin Je Wei; Wu Yi Hong; Chen Yi Hsuan; Chao Tien Sheng

来源：IEEE Electron Device Letters, 2012, 33(2): 215-217.

DOI：10.1109/LED.2011.2175357

• FinFETs
• L-fin
• multiple gate
• NH3 plasma
• Ni salicidation
• poly-Si thin-film transistors (TFTs)

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) similar to 190 mV/dec, and a high on/off current ratio (I-ON/I-OFF) %26gt; 10(6) (V-D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS similar to 148 mV/dec and I-ON/I-OFF similar to 10(7). After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS similar to 132 mV/dec, higher I-ON/I-OFF %26gt; 10(7), and threshold voltage (V-TH) similar to 0.036 V.

• 出版日期2012-2