Deposition of AlN films on nitrided sapphire substrates by reactive DC magnetron sputtering

作者：Wang, Xin-Jian; Song, Hang^*; Li, Da-Bing; Jiang, Hong; Li, Zhi-Ming; Miao, Guo-Qing; Sun, Xiao-Juan; Chen, Yi-Ren; Jia, Hui

来源：Chinese Journal of Luminescence, 2012, 33(2): 227-232.

DOI：10.3788/fgxb20123302.0227

• Aluminum nitride (AlN)
• C-axis orientations
• Crystal qualities
• Grain size distribution
• Optical behavior
• Reactive DC magnetron sputtering
• Sapphire substrates
• XRD patterns

Aluminum nitride (AlN) films were prepared successfully on sapphire and nitrided sapphire substrates by reactive DC magnetron sputtering. The effect of nitridation of sapphire substrate on the growth of AlN films was studied. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and optical absorption spectrum. XRD patterns of A1N films exhibited a strong preferential c-axis orientation, and nitridation of sapphire substrate could improve the crystal quality of AlN films and also decrease the residual stress of films. But AFM results revealed that the grain size distribution of films deposited on nitrided sapphire substrates was not more homogenous than that of films deposited on sapphire substrates, and optical absorption results also showed nitridation of sapphire substrate nearly had no effect on the optical behavior of AlN films.

• 出版日期2012-2
• 单位中国科学院大学; 发光学及应用国家重点实验室