Dual-gated BN-sandwiched multilayer graphene field-effect transistor fabricated by stamping transfer method and self-aligned contact

作者：Park Jeongmin; Kang Haeyong; Chung Dongsub; Kim Joonggyu; Kim Jeong Gyun; Yun Yoojoo; Lee Young Hee; Suh Dongseok^*

来源：Current Applied Physics, 2015, 15(10): 1184-1187.

DOI：10.1016/j.cap.2015.07.001

• Graphene field-effect transistor
• Self-aligned contact
• Stamping transfer method

To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials.

• 出版日期2015-10