HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

作者：Oritsuki Yasunori^*; Yokomichi Masahiro; Kajiwara Takahiro; Tanaka Akihiro; Sadachika Norio; Miyake Masataka; Kikuchihara Hideyuki; Johguchi Koh; Feldmann Uwe; Mattausch Hans Juergen; Miura Mattausch Mitiko

来源：IEEE Transactions on Electron Devices, 2010, 57(10): 2671-2678.

DOI：10.1109/TED.2010.2063171

• Capacitances
• compact model
• power MOSFET
• self-heating effect
• surface-potential model

The completely surface-potential-based MOSFET model HiSIM-HV for high-voltage applications of up to several hundred volts is reviewed, and recently developed new model capabilities are presented. HiSIM-HV enables a consistent evaluation of current and capacitance characteristics for symmetric and asymmetric high-voltage MOSFETs due to a consistent description of the potential distribution across the MOSFET channel as well as the resistive drift regions. The anomalous features, often observed in the capacitances, are explained by large potential drops in the drift regions. Accurate modeling of the overlap region between the gate and drift region is also demonstrated. Different device features based on different device structures are well explained by the geometrical differences.

• 出版日期2010-10