Design and Analysis of a DC-43.5-GHz Fully Integrated Distributed Amplifier Using GaAs HEMT-HBT Cascode Gain Stage

作者：Chang Hong Yeh^*; Liu Yu Cheng; Weng Shou Hsien; Lin Chi Hsien; Yeh Yeh Liang; Wang Yu Chi

来源：IEEE Transactions on Microwave Theory and Techniques, 2011, 59(2): 443-455.

DOI：10.1109/TMTT.2010.2092786

• Distributed amplifier (DA)
• enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT)
• heterojunction bipolar transistor (HBT)
• microwave
• monolithic microwave integrated circuit (MMIC)

Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-mu m InGaP/GaAs HBT, 0.5-mu m Al-GaAs/GaAs enhancement-and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMT-HBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P(1 dB)) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.

• 出版日期2011-2
• 单位中央民族大学