Large-area MoS2 grown using H2S as the sulphur source

作者：Dumcenco Dumitru^*; Ovchinnikov Dmitry; Sanchez Oriol Lopez; Gillet Philippe; Alexander Duncan T L; Lazar Sorin; Radenovic Aleksandra; Kis Andras

来源：2D Materials, 2015, 2(4): 044005.

DOI：10.1088/2053-1583/2/4/044005

• MoS2
• CVD
• structural properties

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate plane), depending on the H2S:H-2 ratio in the reaction gas mixture and temperature at which they are introduced during growth. Optical and atomic force microscopy measurements on horizontal MoS2 demonstrate the formation of monolayer triangular-shape domains that merge into a continuous film. Scanning transmission electron microscopy of monolayer MoS2 shows a regular atomic structure with a hexagonal symmetry. Raman and photoluminescence spectra confirm the monolayer thickness of the material. Field-effect transistors fabricated on MoS2 domains that are transferred onto Si/SiO2 substrates show a mobility similar to previously reported exfoliated and chemical vapor deposition-grown materials.

• 出版日期2015-12
• 单位中国科学院电工研究所