摘要
We designed a high input impedance RF amplifier based on Tower Jazz's 0.18 mu m SiGe BiCMOS process for series nanowire detector. The characterization of its gain and input impedance with a vector network analyzer is described in detail for its specificity. The actual 15 dB gain should be the measured value subtracts 6 dB, which is easy to be ignored. Its input impedance can be equivalent to 6.7 k Omega parallel to 3.4 pF though fitting the measurement, whose accuracy is verified. The process of measurement provides a good reference to characterize the similar special amplifier with unmatched impedance. Published by AIP Publishing.
- 出版日期2016-9
- 单位南京大学