Nanowire Crossbar Logic and Standard Cell-Based Integration

作者：Dong Mian^*; Zhong Lin

来源：IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2009, 17(8): 997-1007.

DOI：10.1109/TVLSI.2008.2002303

• Crossbar
• logic synthesis
• nanotechnology
• nanowire
• VLSI

Nanowire crossbar is one of the most promising circuit solutions for nanoelectronics. However, it is still unclear whether or how they can be competitive in implementing logic circuits, as compared to their MOSFET counterparts. We analyze nanowire crossbars in area, speed, and power, in comparison with their MOSFET counterparts. We show nanowire crossbars do not scale well in terms of logic density and speed. To achieve performance close to their MOSFET counterparts, crossbar circuits need faster field-effect transistors (FETs) to compensate the high resistance of nanowires. Motivated by the analysis and comparative study, we propose a crossbar cells design based on judicious use of silicon nanowires. The crossbar cell is compatible with the conventional MOSFET fabrication and design methodologies, in particular, standard cell-based integrated circuit design. We evaluate logic circuits synthesized with crossbar cells and MOSFET cells based on the MCNC91 benchmark. The results show that crossbar cells can provide a density advantage of more than four times over the traditional MOSFET circuits with the same process technology, while achieving close performance and consuming less than one third power.

• 出版日期2009-8