摘要

X-ray and ultra-violet photoemission spectroscopies (XPS and UPS) are used to elucidate the physical, chemical, and electronic properties of MAPbI(3)/MoO3 interface. The XPS data suggest migration of iodide species from the MAPbI(3) into the MoO3 upon direct contact of these two layers. Chemically, these iodide inclusions cause a significant presence in reduced Mox+ species. Electronically, UPS data show that this reaction induces gap states and reduces the MoO3 workfunction. It is shown that a thin organic interlayer blocks migration of volatile iodide from MAPbI(3) into the MoO3. This organic buffer layer results in significantly better chemical stability, reduced gap state density, and higher MoO3 workfunction. These results highlight the importance of organic buffer layers in separating these two materials during device fabrication. Published by AIP Publishing.