Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

作者：Yoon Sung Min^*; Byun Chun Won; Yang Shinhyuk; Park Sang Hee Ko; Cho Doo Hee; Jung Soon Won; Kang Seung Youl; Hwang Chi Sun

来源：IEEE Electron Device Letters, 2010, 31(2): 138-140.

DOI：10.1109/LED.2009.2036137

• Nonvolatile memory (NVM)
• oxide semiconductor
• polymeric ferroelectric
• thin-film transistor (TFT)

A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200 degrees C. The fabricated memory cell successfully showed the write and nondestructive readout operations.

• 出版日期2010-2