科研之友
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摘要
In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (V-set). The difference in V-set and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of V-set in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on V-set. It reveals that the oxygen vacancy (V-O) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects.
