Antimony Selenide Phase-Change Nanowires for Memory Application

作者：Jung Soon Won^*; Yoon Sung Min; You In Kyu; Yu Byoung Gon; Koo Kyung Wan

来源：Journal of Nanoscience and Nanotechnology, 2011, 11(2): 1569-1572.

DOI：10.1166/jnn.2011.3385

• Antimony Selenide
• Nanowire
• Nonvolatile Memory
• Phase-Change Memory

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (similar to 10 M Omega) and low-resistance (similar to 1 k Omega) states which are attributed to amorphous and crystalline states, respectively.

• 出版日期2011-2