科研之友
微信
新浪微博
Facebook
分享链接
摘要
This work describes the influences of the electrode-substrate distance and the inter-rod distance of the electrode on the film qualities in very-high-frequency plasma-enhanced deposition using a novel plasma source for silicon thin-film solar-cell applications. As the electrode-substrate distance decreased or the inter-rod distance of the electrode decreased, the crystallinity of the silicon film was improved. The crystalline volume fraction of the silicon film deposited under optimized conditions was 48 %. Also, the thickness distribution of the silicon films changed as a function of the electrode-substrate distance. The effective area for silicon deposition was 1 m x 1 m, and the plasma excitation frequency was 80 MHz. The crystallinities of the silicon films were evaluated by using X-Ray diffraction and Raman spectroscopy.
- 出版日期2009-12
