NiTi smart alloys for memristors with multi-time-scale volatility

作者:Georgiou J*; Kyriakides E; Hadjistassou C
来源:Electronics Letters, 2012, 48(14): 877-878.
DOI:10.1049/el.2012.1420

摘要

Presented is a novel memristive device based on a NiTi smart alloy. The proposed memristors are simple to implement on existing semiconductor processes and offer multi-time-scale volatility through geometry, alloy composition and chip temperature control. Multi-time-scale volatility is a key requirement for future biomimetic computer architectures.

  • 出版日期2012-7-5

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