An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

作者：Phipps A^*; Sadoulet B; Juillard A; Jin Y

来源：Journal of Low Temperature Physics, 2016, 184(1-2): 505-511.

DOI：10.1007/s10909-016-1475-2

• HEMT
• Charge amplifier
• Cryogenic electronics
• Dark matter
• Radiation detectors

We present the design and noise performance of a fully cryogenic ( K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/ while retaining background discrimination. The amplifier dissipates 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of =106 eV (35 electrons) for leakage currents below 4 x 10(-15) A.

• 出版日期2016-7