Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

作者：Li Yuanyuan V^*; Mourey Devin A; Loth Marsha A; Zhao Dalong A; Anthony John E; Jackson Thomas N

来源：Organic Electronics, 2013, 14(10): 2411-2417.

DOI：10.1016/j.orgel.2013.06.007

• Hybrid CMOS
• Ink-jet printing
• Small molecular organic semiconductor
• ZnO
• PEALD

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diF-TESADT OTFTs have field effect mobility as large as 0.4 cm(2)/V s. PEALD ZnO TFTs typically have field-effect mobility %26gt;15 cm(2)/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (%26lt;= 200 degrees C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and sub-pA leakage currents for both low and high input levels.

• 出版日期2013-10