A dynamic n-buffer insulated gate bipolar transistor

作者：Huang S^*; Sheng K; Udrea F; Amaratunga GAJ

来源：Solid-State Electronics, 2001, 45(1): 173-182.

DOI：10.1016/S0038-1101(00)00239-2

• dynamic buffer
• insulated gate bipolar transistor
• voltage drop
• energy loss
• short circuit

A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT. Similar to the NPT-IGBT, the switching performance of the DB-IGBT is insensitive to temperature. These advantages make this device an attractive candidate for high frequency high power application.

• 出版日期2001-1