A 0.5-20 GHz bandwidth enhanced distributed amplifier

作者：Drakaki Maria^*; Siskos Stylianos; Hatzopoulos Alkis

来源：Microelectronic Engineering, 2012, 90: 26-28.

DOI：10.1016/j.mee.2011.04.031

• Distributed amplifier
• CMOS

In this work a 0.5-23 GHz three-stage broadband distributed amplifier designed in a standard 0.18 mu m RF CMOS process is presented. A Darlington connection is used in the design to further increase the bandwidth of the amplifier. Gate and drain transmission lines use small size circular spiral inductors provided by the process. S-parameter simulation results show 8 +/- 1 dB small signal gain from 0.5 to 20 GHz and a unity-gain bandwidth of 23 GHz. Input and output return losses are better than -10 dB from 1 to 23 GHz and -8 dB from 1 to 24 GHz respectively. The improved performance of the proposed distributed amplifier is verified by comparison of the S-parameter simulation results with those obtained from a standard common-source three-stage distributed amplifier.

• 出版日期2012-2