Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

作者：Xie, Haiting; Liu, Guochao; Zhang, Lei; Zhou, Yan; Dong, Chengyuan^*

来源：Applied Sciences-Basel, 2017, 7(10): 1099.

DOI：10.3390/app7101099

• amorphous oxide semiconductor (AOS)
• thin film transistor (TFT)
• nitrogen-doped amorphous InGaZnO (a-IGZO:N)
• nitrogen-doped amorphous InZnO (a-IZO:N)
• hetero-structure

The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO: N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (mu FE = 15.0 cm(2) center dot V (-1) center dot s(- 1), SS = 0.5 V/dec, V-TH = 1.5 V, I-ON/I-OFF = 1.1 x 10(8)) and stability (V-TH shift of 1.5, -0.5 and -2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

• 出版日期2017-10
• 单位上海交通大学