Dynamics of iron-acceptor-pair formation in co-doped silicon

作者：Bartel T^*; Gibaja F; Graf O; Gross D; Kaes M; Heuer M; Kirscht F; Moeller C; Lauer K

来源：Applied Physics Letters, 2013, 103(20): 202109.

DOI：10.1063/1.4830227

The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

• 出版日期2013-11-11