Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

作者：TU Hailing^*; Xiao Qinghua; Yu Gao; Zhou Qigang; Zhang Guohu; Qing Chang

来源：Rare Metals, 2007, 26(6): 521-527.

DOI：10.1016/S1001-0521(08)60001-7

• silicon
• numerical simulation
• crystal growth

Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski (CZ) crystal growth configuration, the three dimensional (3D) modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.

• 出版日期2007-12
• 单位北京有色金属研究总院