A 25 Gbps silicon microring modulator based on an interleaved junction

作者:Rosenberg J C*; Green W M J; Assefa S; Gill D M; Barwicz T; Yang M; Shank S M; Vlasov Y A
来源:Optics Express, 2012, 20(24): 26411-26423.
DOI:10.1364/OE.20.026411

摘要

A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V pi L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

  • 出版日期2012-11-19
  • 单位IBM