摘要
A frequency-tunable cloak with semiconducting constituents has been proposed by modifying the dielectric constant by externally controlling the free-carrier density. We have theoretically studied that the cloaking frequency of a single-layer shell consisting of intrinsic InSb can be tuned by varying the temperature based on the Mie scattering theory. The calculated results show that this tunable cloak has a large bandwidth of over 0.3 THz, a tunability of cloaking frequency of 17 GHz K-1 with temperature and a dramatic reduction in the total scattering cross section of 90% at cloaking frequencies. It is also possible to realize a tunable cloak of extrinsic semiconductor Ge by changing the impurity density with current injection.
- 出版日期2010-5-5
- 单位南京航空航天大学