A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

作者：Gao Baohong^*; Zhu Yadong; Liu Yuling; Wang Shengli; Zhou Qiang; Liu Xiaoyan

来源：Chinese Journal of Semiconductors, 2010, 31(7).

DOI：10.1088/1674-4926/31/7/076002

• BDD film anode
• Boron-doped diamond films
• Cleaning process
• Comparative experiments
• Metallographic microscopy
• Organic contaminant
• Organic contamination
• Organic matter
• Organic residues
• Particle removal
• Polished wafers
• Protective films
• Silicon wafer surface
• Surfactant films
• XPS measurements

This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces. It combines a non-ionic surfactant with boron-doped diamond (BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer's surface, because it can form a protective film on the surface, which makes particles easy to remove. The effects of particle removal comparative experiments were observed by metallographic microscopy, which showed that the 1% v/v non-ionic surfactant achieved the best result. However, the surfactant film itself belongs to organic contamination, and it eventually needs to be removed. BDD film anode electrochemical oxidation (BDD-EO) is used to remove organic contaminants, because it can efficiently degrade organic matter. Three organic contaminant removal comparative experiments were carried out: The first one used the non-ionic surfactant in the first step and then used BDD-EO, the second one used BDD-EO only, and the last one used RCA cleaning technique. The XPS measurement result shows that the wafer's surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique, and the non-ionic surfactant can be efficiently removed by BDD-EO.

• 出版日期2010
• 单位天津大学