Atomic nitrogen source for the formation of aluminum nitride tunnel barrier SIS junctions

作者：Endo A^*; Noguchi T; Kroug M; Tamura T; Inoue H

来源：Physica C-Superconductivity and Its Applications, 2009, 469(15-20): 1589-1592.

DOI：10.1016/j.physc.2009.05.256

• Superconductor/insulator/superconductor junction
• Aluminum nitride tunnel barrier
• ECR-plasma source
• Optical emission spectroscopy

A 2.45 GHz electron-cyclotron-resonance plasma source has been adopted to form AlN barriers of Nb/Al-AlN/Nb SIS junctions. Good quality AlN barriers with tunnel resistivities as small as 7 Omega mu m(2) have been realized. The optical emission spectrum of the nitrogen plasma has been investigated in order to evaluate the dissociation rate of N(2). AlN barriers with less leakage current were formed when the relative intensity of the emission lines of atomic N was stronger. Nitridation by atomic N could be beneficial in the formation of low resistivity, low leakage current AlN barriers.

• 出版日期2009-10
• 单位中国科学院国家天文台