High rate (similar to 7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se-2 thin-film solar cells with efficiency beyond 15%

作者：Illiberi Andrea^*; Grob Frank; Frijters Corne; Poodt Paul; Ramachandra Ram; Winands Hans; Simor Marcel; Bolt Pieter Jan

来源：Progress in Photovoltaics: Research and Applications , 2013, 21(8): 1559-1566.

DOI：10.1002/pip.2423

• thin films
• zinc oxide
• solar cells
• transparent conductive oxides
• atmospheric pressure
• plasma-enhanced chemical vapor deposition

Undoped zinc oxide (ZnO) films have been grown on a moving glass substrate by plasma-enhanced chemical vapor deposition at atmospheric pressure. High deposition rates of similar to 7nm/s are achieved at low temperature (200 degrees C) for a substrate speed from 20 to 60mm/min. ZnO films are highly transparent in the visible range (90%). By a short (similar to minute) post-deposition exposure to near-ultraviolet light, a very low resistivity value of 1.6.10(-3) Omega cm for undoped ZnO is achieved, which is independent on the film thickness in the range from 180 to 1200nm. The photo-enhanced conductivity is stable in time at room temperature when ZnO is coated by an Al2O3 barrier film, deposited by the industrially scalable spatial atomic layer deposition technique. ZnO and Al2O3 films have been used as front electrode and barrier, respectively, in Cu(In,Ga)Se2 (CIGS) solar cells. An average efficiency of 15.4 +/- 0.2% (15 cells) is obtained that is similar to the efficiency of CIGS reference cells in which sputtered ZnO:Al is used as electrode.

• 出版日期2013-12