A high performance gate engineered charge plasma based tunnel field effect transistor

作者：Bashir Faisal; Loan Sajad A^*; Rafat M; Alamoud Abdul Rehman M; Abbasi Shuja A

来源：Journal of Computational Electronics, 2015, 14(2): 477-485.

DOI：10.1007/s10825-015-0665-5

• Band-to-band tunneling (BTBT)
• Charge plasma
• Dopingless
• Gate engineering
• TFET
• Subthreshold slope
• Switching performance

In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual material top gate and thus two gates appear at the top, main gate 1 and a tunneling gate (TG). The use of TG has enhanced the performance of the device significantly and it acts as a performance booster. The simulation study has shown that the and ratio in the proposed GEDL-TFET device have increased by 53 times and 68 times in comparison to a double gate doped TFET (D-TFET) and a double gate dopingless TFET (DL-TFET) devices respectively. Further, a significant improvement in average subthreshold slope of 57% has been achieved in the proposed GEDL-TFET device in comparison to the other two devices. Besides, the cutoff frequency of GEDL-TFET (90.77 GHZ) has increased by 12 times in comparison to D-FET (7.77 GHZ) and DL-TFET (7.77 GHZ) devices respectively. The transient analyses have shown that a reduction of 47 and 44.11 % in switching ON-delay and 21.1 and 16.23 % in switching OFF delay is obtained in the GEDL-TFET device based inverting amplifier in comparison to DL-TFET and D-TFET based inverters amplifiers respectively.

• 出版日期2015-6