摘要

The effect of the free-carrier delay time on the space-charge-region capacitance is investigated and a method of finding such capacitance is developed. The method, which is based on a comprehensive quasi-static space-charge-region capacitance model and on the concept of the delay time in the region, describes the non-quasi-static capacitance for all voltages, all frequencies, and for both step and linear-graded junction profiles. The method requires a simple numerical iterative procedure. The results from the present method show good agreement when compared with a numerical method based on Sah's transmission-line equivalent circuit model and with measured dependencies. The method provides a tool for more accurate semiconductor device modeling and for integrated circuit simulations.

  • 出版日期1988

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