A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS

作者：Tsai Ming Hsien^*; Hsu Shawn S H; Hsueh Fu Lung; Jou Chewn Pu

来源：IEEE Transactions on Microwave Theory and Techniques, 2010, 58(12): 4004-4011.

DOI：10.1109/TMTT.2010.2087033

• CMOS
• electrostatic discharge (ESD)
• low-noise amplifier (LNA)
• radio frequency (RF)
• silicon-controlled rectifier (SCR)
• transmission-line pulse (TLP)

This paper studies the electrostatic discharge (ESD)-protected RF low-noise amplifiers (LNAs) in 65-nm CMOS technology. Three different ESD designs, including double-diode, modified silicon-controlled rectifier (SCR), and modified-SCR with double-diode configurations, are employed to realize ESD-protected LNAs at 5.8 GHz. By using the modified-SCR in conjunction with double-diode, a 5.8-GHz LNA with multiple ESD current paths demonstrates a 4.3-A transmission line pulse (TLP) failure level, corresponding to a similar to 6.5-kV Human-Body-Mode (HBM) ESD protection level. Under a supply voltage of 1.2 V and a drain current of 6.5 mA, the proposed ESD-protected LNA demonstrates a noise figure of 2.57 dB with an associated power gain of 16.7 dB. The input third-order intercept point (IIP3) is -11 dBm, the input and output return losses are greater than 15.9 and 20 dB, respectively.

• 出版日期2010-12
• 单位中国科学院电工研究所; 清华大学