Area-selective deposition of self-assembled monolayers on SiO2/Si(100) patterns

作者：Wang, Changshun^*; Pan, Xu; Sun, Cunying; Urisu, Tsuneo

来源：Applied Physics Letters, 2006, 89(23): 233105.

DOI：10.1063/1.2400114

• Contact angle measurements
• Octadecyltrichlorosilane
• Self-assembled monolayers (SAM)

Area-selective deposition of self-assembled monolayers (SAMs) has been demonstrated on patterns of SiO2/Si(100). The pattern was fabricated by synchrotron radiation stimulated etching of SiO2 thin films on Si substrate. Several kinds of the patterns were obtained with different types of masks. A dodecene SAM was deposited on Si surface and an octadecyltrichlorosilane SAM was deposited on SiO2 surface. The deposited SAMs were densely packed and well ordered characterized by infrared spectroscopy, ellipsometry, and water contact angle measurements.

• 出版日期2006-12-4
• 单位上海交通大学