Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

作者：Ko Suk Min; Kwack Ho Sang; Park Chunghyun; Yoo Yang Seok; Kwon Soon Yong; Kim Hee Jin; Yoon Euijoon^*; Dang Le Si; Cho Yong Hoon

来源：Applied Physics Letters, 2013, 103(22): 222104.

DOI：10.1063/1.4833917

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

• 出版日期2013-11-25
• 单位中国地震局