科研之友
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摘要
A method suitable for performing NBTI measurements on power p-channel VDMOS transistors is described. A practical implementation using simple boosting circuit for obtaining required gate stress voltage and sweep I-V measurements for the threshold voltage shift determination is presented. Experimental results are discussed in terms of the time necessary to perform interim measurements during NBTI tests. It is shown that the measurements could be done fast enough to capture part of the dynamic recovery effect in these devices, which is important for the lifetime prediction.
- 出版日期2012-8
