Scatterings and Quantum Effects in (Al, In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

作者：Wang Leizhi; Yin Ming; Khan Asif; Muhtadi Sakib; Asif Fatima; Choi Eun Sang; Datta Timir^*

来源：Physical Review Applied, 2018, 9(2): 024006.

DOI：10.1103/PhysRevApplied.9.024006

Charge transport in the wide-band-gap (Al, In)N/GaN heterostructures with high carrier density approximately 2 x 10(13) cm(-2) is investigated over a large range of temperature (270 mK <= T <= 280 K) and magnetic field (0 <= B <= 18 T). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23m(e) is determined. Furthermore, the linear dependence with temperature (T < 20 K) of the inelastic scattering rate (tau(-1)(i) proportional to T) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (tau(q)/tau(t) < 1) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

• 出版日期2018-2-7