Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches

作者：Labalette Marina; Jeannot Simon; Blonkowski Serge; Beilliard Yann; Ecoffey Serge; Souifi Abdelkader; Drouin Dominique

来源：IEEE Transactions on Nanotechnology, 2017, 16(5): 745-751.

DOI：10.1109/TNANO.2017.2698205

• Complementary resistive switches (CRS)
• monolithic integration
• non-volatile memory (NVM)
• resistive random access memory (ReRAM)
• switching oxide

This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent with resistive random access memories fabricated and characterized with the same procedure that showed R-OFF/R-ON ratios of 100. Complementary operating voltages of Vth(1),(3)= |0.8| V and Vth(2.4) = |1.1| V are obtained for 88 x 22 nm(2) junction with a 6 nm thick HfOx junction.

• 出版日期2017-9