Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy

作者：Stoughton S; Showak M; Mao Q; Koirala P; Hill**erry D A; Sallis S; Kourkoutis L F; Nguyen K; Piper L F J; Tenne D A; Podraza N J; Muller D A; Adamo C; Schlom D G^*

来源：APL Materials, 2013, 1(4): 042112.

DOI：10.1063/1.4824041

Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 parallel to (001)(YSZ) with [100]BiVO4 parallel to [100](YSZ). Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 +/- 0.1 eV.

• 出版日期2013-10