摘要

A wideband 2-3 GHz three-stage low noise amplifier (LNA) featuring current reuse, cascaded L-type input matching network (IMN), and optimized multiple gated transistors method (MGTR) using 0.18-mu m CMOS technology is presented in this paper. The current-reused topology is employed in the first two stages to reduce power consumption. For a wideband input matching, the common gate (CG) topology is adopted. Moreover, the cascaded L-type IMN composed of two single L-type networks cascaded in series is proposed for the first time. To improve the linearity performance, the optimized MGTR taking both transconductance g(m) and third-order nonlinear coefficient g(m)'' into consideration is proposed and applied to the output stage. The proposed LNA presents a maximum power gain of 28.0 dB, an input matching across 1.8-5.8 GHz and a high third-order input intercept point (IIP3) of -9.89 dBm. A noise figure (NF) of 3.1-3.5 dB is obtained in the required band with a power dissipation of 6.49 mA from a 3 V power supply.