ALD synthesis of SnSe layers and nanostructures

作者：Drozd V E^*; Nikiforova I O; Bogevolnov V B; Yafyasov A M; Filatova E O; Papazoglou D

来源：Journal of Physics D: Applied Physics , 2009, 42(12): 125306.

DOI：10.1088/0022-3727/42/12/125306

Growth of SnSe structures by the ALD method using Et(4)Sn and H(2)Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 degrees C and the morphology of the layer depends on the temperature. At 350 degrees C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 degrees C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 degrees C shows a small shift (similar to 0.20 eV) of the room-temperature band gap energy.

• 出版日期2009-6-21