Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

作者：Fang L^*; Shen MR

来源：Thin Solid Films, 2003, 440(1-2): 60-65.

DOI：10.1016/S0040-6090(03)00825-3

• dielectric properties
• structural properties
• laser ablation
• deposition process

CaCu3Ti4O12 (CCTO) thin films were successfully deposited on Pt/Ti/SiO2/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 degreesC and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 degreesC and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates.

• 出版日期2003-9-1
• 单位宿州学院; 苏州大学