Microwave noise characterisation of AlInAs/GaAsSb/InP DHBTs

作者：Zeng Y P^*; Benedickter H; Wu B R; Bolognesi C R

来源：Electronics Letters, 2009, 45(23): 1190-U65.

DOI：10.1049/el.2009.1646

Reported is the first experimental microwave noise characterisation of 0.9 x 11.5 mu m(2) emitter AlInAs/GaAsSb/InP double heterojunction bipolar transistors with a 'type-I' AlInAs emitter. The devices feature cutoff frequencies of f(T) = 210 GHz and f(MAX) = 127 GHz, and achieve a minimum noise figure NF(min) < 3 dB with an associated gain G(A) = 12 dB at 10 GHz.

• 出版日期2009-11-5