Ni-63 schottky barrier nuclear battery of 4H-SiC

作者：Li, Xiao-Ying; Ren, Yong; Chen, Xue-Jiao; Qiao, Da-Yong^*; Yuan, Wei-Zheng

来源：Journal of Radioanalytical and Nuclear Chemistry, 2011, 287(1): 173-176.

DOI：10.1007/s10967-010-0746-7

• Silicon carbide
• Schottky diode
• Betavoltaic battery
• Ni-63
• 4H-SiC

The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm(2) to collect the charge from a 4 mCi/cm(2) Ni-63 source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the Ni-63 source with an activity of 0.12 mCi. An open circuit voltage (V-OC) of 0.27 V and a short circuit current density (J(SC)) of 25.57 nA/cm(2) are measured. The maximum output power density (P-max) of 4.08 nW/cm(2) and power conversion efficiency (eta) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p-n or p-i-n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics.

• 出版日期2011-1
• 单位西北工业大学