摘要
One-dimensional semiconductor nanomaterials are expected to be important components in future nanodevices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO nanowire (NW) arrays using a TiN buffer layer, but without using any catalysis or template, was proposed although the crystal structure thus obtained differed entirely from that of ZnO.
- 出版日期2004-12-9
- 单位清华大学